5SHX2645L0004 IGCT集成门极换流 lntergrated

5SHX2645L0004ABB IGCT集成门极换流 晶闸管Q (lntergrated Gate Commutated Thyristors)是一种中压变频器开发的用于巨型电力电子成套装置中的新型电力半导体开关器件(集成门极换流晶闸管=门极换流晶闸管+门极单元)。1997年由ABB公司提出。IGCT使变流装置在功率、可靠性、开关速度、效率、成本、重量和体积等方面都取得了巨大进展，给电力电子成套装置带来了新的飞跃。IGCT是将GTO区片与反并联二极管和门极驱动电路集成在一起，再与其门极驱动器在外围以低电感方式连接，结合了晶体管的稳定关断能力和晶闻管低通态损耗的优点，在导通阶段发挥晶闸管的性能，关断阶段呈现晶体管的特性。IGCT具有电流大、阻断电压高、开关频率高、可靠性高、结构紧凑、低导通损耗等特点，而且造成本低，成品率高，有很好的应用前景。已用于电力系统电网装置(100MVA)和的中功率工业驱动装置(5MW)IGCT在中压变频器领域内成功的应用了11年的时间(到09年为止)，由于IGCT的高速开关能力无需缓冲中电路，因而所需的功率元件数目更少，运行的可靠性大大增高。
GCT集IGBT(绝缘门极双极性晶体管)的高速开关特性和GTO(门极关断晶闸管)的高阳断电压和低导通损耗特性于一体，一般触发信号通过光纤传输到IGCT单元。在ACS6000的有缘整流单元的相模块里，每相模块由|GCT和二极管、钳位电容组成，由独立的门极供电单
元GUSP为其提供能源。
产品描述:这是一款紧凑目经济的电磁接触器，适用于工业和建筑,应用中的电动机控制。它具有高性能、高可靠性以及低维护性等特点
产品参数:额定电压为24V DC，额定电流为2645A

5SHX2645L0004 3BHL000389P0104

5SHX2645L0004 ABBQ |GCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-loss, etc., and low manufacturing cost
The product rate is high, and it has a good application prospect. Usually in device design, if a high blocking voltage value is required, an increase in the thickness of the silicon wafer is required. However, the increase of wafer thickness will inevitably lead to the increase of conduction and switching loss. When IGCT adopts buffer layer structure, the thickness of silicon wafer and standard structure are thinner under the same blocking voltage, which greatly reduces the on-off and on-off losses, thus improving the efficiency of the device. The use of a buffer layer also makes it possible to combine a single GCT with a diode
5. The SHX2645L0004 ABB| The most distinctive feature of the GCT drive is its “gate commutation” and “hard drive” shut-off process with the help of an integrated gate circuit

5SHX2645L0004ABB IGCT integrated Gate Commutated thyristor Q (lntergrated Gate Commutated) Thyristors (Integrated gate commutated thyristors = Gate commutated thyristors + gate units) is a new type of power semiconductor switching device (integrated gate commutated thyristors = gate commutated thyristors + gate units) developed by medium voltage frequency converter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO area with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low-on-state loss of the transistor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. IGCT has been used in power system power grid devices (100MVA) and medium power industrial drive devices (5MW)IGCT has been successfully applied in the field of medium voltage inverter for 11 years (until 2009), because the high-speed switching capability of IGCT does not need to buffer the circuit, so the number of power components required is less, and the reliability of operation is greatly increased.
GCT combines the high-speed switching characteristics of IGBT(insulated gate bipolar transistor) with the high positive breaking voltage and low on-loss characteristics of GTO(gate off thyristor), and generally the trigger signal is transmitted to the IGCT unit through optical fibers. In the phase module of the marginal rectifier unit of the ACS6000, each phase module consists of |GCT, a diode, and a clamp capacitor, and is powered by an independent gate
The GUSP provides energy for it.
Description: This is a compact and economical electromagnetic contactor for motor control in industrial and construction applications. It has the characteristics of high performance, high reliability and low maintenance
Product parameters: Rated voltage is 24V DC, rated current is 2645A