5SHY5045L0020 5SXE10-0181 AC10272001R0101 ABB IGCT可控硅板子

5SHY5045L0020

5SHY5045L0020 5SXE10-0181 AC10272001R0101 Silicon Controlled Rectifier (SCR) is a high-power electrical component, also known as a thyristor. It has the advantages of small size, high efficiency and long life. In the automatic control system, it can be used as a high-power driving device to realize the control of high-power equipment with low-power control. It has been widely used in AC and DC motor speed control system, power regulation system and servo system.
5SHY5045L0020 5SXE10-0181 AC10272001R0101 thyristor is divided into two kinds: one-way thyristor and bidirectional thyristor. Bidirectional thyristor is also called TRIAC, or TRIAC for short. The bidirectional thyristor is structurally equivalent to two unidirectional thyristors in reverse connection, and this thyristor has a dual pilot pass function. Its on-off state is determined by the control pole G. Adding a positive pulse (or negative pulse) to the control pole G can make it forward (or reverse) conduction. The advantage of this device is that the control circuit is simple and there is no reverse voltage problem, so it is particularly suitable for AC contactless switch use.
5SHY5045L0020 5SXE10-0181 AC10272001R0101 We use a unidirectional thyristor, that is, an ordinary thyristor, which is composed of four layers of semiconductor material, with three PN junctions and three external electrodes (Figure 2(a)) : The electrode led by the first layer of P-type semiconductor is called anode A, the electrode led by the third layer of P-type semiconductor is called the control pole G, and the electrode led by the fourth layer of N-type semiconductor is called the cathode K. From the circuit symbol of the thyristor (Figure 2(b)), it can be seen that it is a single-direction conductive device like the diode, and the key is that there is a control pole G, which makes it have completely different working characteristics from the diode.
5SHY5045L0020 5SXE10-0181 AC10272001R0101 P1N1P2N2 four-layer three-terminal device with silicon single crystal as the basic material, started in 1957, because its characteristics are similar to vacuum thyratron, so the international known as silicon thyristor, referred to as thyristor T, And because the thyristor was originally in static rectification, it is also called silicon controllable rectifier element, referred to as thyristor SCR.
5SHY5045L0020 5SXE10-0181 AC10272001R0101 In performance, thyristor not only has unidirectional conductivity, but also has more valuable controllability than silicon rectifier components (commonly known as “dead silicon “). It only has two states: on and off.
5SHY5045L0020 5SXE10-0181 AC10272001R0101 thyristor can control high-power electromechanical equipment with milliampere-level current, if the power exceeds this, due to the significant increase in component switching loss, the average current phase allowed to pass is reduced, at this time, the nominal current should be degraded.
5SHY5045L0020 5SXE10-0181 AC10272001R0101 thyristor has many advantages, such as: to control high power with small power, power amplification up to hundreds of thousands of times; The response is extremely fast, opening and closing in microseconds; No contact operation, no spark, no noise; High efficiency, low cost and so on.
The weakness of thyristor: static and dynamic overload capacity is poor; Easily misled by interference.
Thyristor from the appearance of the main classification: bolt shape, flat plate shape and bottom shape.
Structure of thyristor element
Regardless of the shape of the thyristor, their core is a four-layer P1N1P2N2 structure composed of P-type silicon and N-type silicon. See Figure 1. It has three PN junctions (J1, J2, J3), from the P1 layer of the J1 structure leads to the anode A, from the N2 layer leads to the negative level K, from the P2 layer leads to the control pole G, so it is a four-layer three-terminal semiconductor device.